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NAND Flash & Packaging Technology NAND闪存与封装技术

HICHIP's expertise spans NAND technology, advanced IC packaging, firmware development, and storage module manufacturing. We bridge raw NAND wafers and market-ready products. 海芯的专业知识涵盖NAND技术、先进IC封装、固件开发和存储模组制造。我们连接NAND晶圆与市场就绪产品。

NAND Cell Technology NAND单元技术

From SLC to QLC — each generation trades endurance for density. 从SLC到QLC — 每一代都在耐久性和密度之间权衡。

NAND Wafer

NAND flash stores data by trapping electrical charge in floating gates. SLC stores 1 bit per cell with 100K+ program/erase cycles. Each generation — MLC (2-bit), TLC (3-bit), QLC (4-bit) — increases density but reduces endurance. We select the right NAND type for every application. NAND闪存通过在浮栅中捕获电荷来存储数据。SLC每单元存储1位,具有10万+次编程/擦除周期。每一代——MLC(2位)、TLC(3位)、QLC(4位)——都增加了密度但降低了耐久性。我们为每个应用选择最合适的NAND类型。

NAND Cell Types
SLC

Single-Level Cell

1 bit / cell
100K P/E Cycles Fastest Read/Write Highest Endurance Industrial Primary Use
MLC

Multi-Level Cell

2 bits / cell
10K P/E Cycles Fast Read/Write High Endurance Enterprise Primary Use
TLC

Triple-Level Cell

3 bits / cell
3K P/E Cycles Good Read/Write Medium Endurance Consumer/DC Primary Use
QLC

Quad-Level Cell

4 bits / cell
1K P/E Cycles Read-Optimized Performance Highest Density Data Center Primary Use

3D NAND Layer Stack 3D NAND层堆叠

Vertical stacking replaced planar NAND. Solidigm leads with 192-layer floating gate QLC. 垂直堆叠取代了平面NAND。Solidigm以192层浮栅QLC领先。

3D NAND Wafer

Instead of shrinking cells horizontally (which hit physical limits below 15nm), 3D NAND stacks cells vertically. Each "layer" adds capacity without reducing reliability. Today's leading-edge products stack 192+ layers, with 300+ layers on the roadmap. 3D NAND不再水平缩小单元(这在15nm以下遇到了物理极限),而是垂直堆叠单元。每一"层"都在不降低可靠性的情况下增加容量。今天的领先产品堆叠192+层,路线图上有300+层。

HICHIP sources 3D NAND wafers from Samsung (V-NAND), SK hynix, and Solidigm, then packages them into finished storage modules through our wire bonding and flip chip lines. 海芯从三星(V-NAND)、SK海力士和Solidigm采购3D NAND晶圆,然后通过我们的引线键合和倒装焊产线将其封装成成品存储模组。

3D NAND Vertical Stack
2013
24
Layers
2017
64
Layers
2020
128
Layers
2022
176
Layers
2023
192
Solidigm
2024
238
SK Hynix
2026+
300+
Roadmap

IC Packaging & Testing IC封装与测试

This is what HICHIP does. Our lines transform NAND dies into market-ready modules. 这是海芯的核心业务。我们的产线将NAND芯片转化为市场就绪的模组。

Wire Bonding 引线键合

Gold or copper wire interconnects between die and substrate. Cost-effective for medium-pin-count packages like BGA and TSOP. 金线或铜线连接芯片与基板。对于BGA和TSOP等中等引脚数封装具有成本效益。

BGA / TSOP / QFN Gold / Cu Wire 15-50μm Diameter

Flip Chip 倒装焊

Solder bump direct die-to-substrate connection. Higher I/O density and better electrical performance for advanced packages. 焊球直接芯片对基板连接。更高的I/O密度和更好的电气性能,适用于先进封装。

FC-BGA / FC-CSP Solder Bump Underfill Protection

Test & Quality 测试与质量

100% burn-in at 125°C, functional pattern testing, and temperature cycling for every module before shipment. 每个模组出货前100% 125°C老化测试、功能图形测试和温度循环测试。

Burn-In (125°C) Pattern Test Temp Cycling

Note: HICHIP does NOT manufacture NAND wafers. We source NAND wafers from global suppliers (Samsung, SK hynix, Solidigm) and apply our packaging, firmware, and testing expertise to produce finished storage modules. 说明:海芯利华不制造NAND晶圆。我们从全球供应商(三星、SK海力士、Solidigm)采购NAND晶圆,并应用我们的封装、固件和测试专业知识来生产成品存储模组。

Manufacturing Flow 制造流程

From NAND wafer to finished module. 从NAND晶圆到成品模组。

Manufacturing Flow
1

Wafer晶圆采购

Samsung, SK hynix, Solidigm三星、SK海力士、Solidigm

2

Die Sort芯片分选

KGD test & binning良品测试与分档

3

PackageIC封装

Wire bond / Flip chip引线键合/倒装焊

4

SMTSMT贴片

PCB placement & reflowPCB贴片与回流焊

5

Firmware固件烧录

Controller firmware控制器固件

6

Test测试

Burn-in & final QC老化与质检

7

Ship包装出货

Anti-static pack防静电包装